Freestanding Antiferromagnetic Oxide Membranes: Synthesis and Characterization of Cr$_2$O$_3$

RESUMO

Antiferromagnetic (AFM) insulators stand out as a promising class of materials for fast switching, energy-efficient magnon-based technology, but our understanding of how to tune these properties with the lattice remains limited. As an AFM insulator with strong magnetoelectric response, Cr$_2$O$_3$ membranes stand out as a promising platform to explore multi-modal tunability via strain. However, fabricating these membranes is challenging due to the scarcity of etchable sacrificial layers with compatible lattice constants and sufficient surface quality. We address this issue by utilizing La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO) as a sacrificial layer, enabling successful fabrication of millimeter-scale Cr$_2$O$_3$ membranes. Substrate-free characterization reveals that strain due to the lattice mismatch during growth is released by the formation of small polycrystalline domains, preserving single-crystalline order over ~90% of the membrane area. Bulk-like structural properties are confirmed by transmission electron microscopy, X-ray diffraction, Raman spectroscopy, and second-harmonic generation spectroscopy. Platinum Hall measurements reveal an above-room-temperature N$é$el transition. These results establish Cr$_2$O$_3$ membranes as a viable platform for strain-tuning antiferromagnetism and magnetoelectricity.