Deterministic patterning and alignment of tellurium quantum wires using nanoscale templates

RESUMO

Tellurium (Te) is an intriguing one-dimensional (1D) semiconductor that has recently attracted considerable interest as a p-type channel material. However, scalable synthesis methods have lacked control over the orientation and patterning of the Te atomic chains, thus limiting its practical use. Guided by theory, we overcome this challenge using nanowire-shaped templates to achieve oriented, single-crystal growth of Te on amorphous substrates. Strong alignment of Te atomic chains is achieved as template widths are reduced to sub-20 nm. This high structural order, confirmed by 4D scanning transmission electron microscopy, enables the observation of pristine quantum transport phenomena for deterministically patterned Te. Field-effect transistors exhibit well-defined conductance plateaus at 77 K due to population of individual 1D subbands. Furthermore, Coulomb blockade emerges at 1.7 K, with the Te channel acting as a gate-tunable quantum dot. This synthesis approach provides a scalable pathway for integration of Te-based quantum materials for future electronic and quantum technologies.