12 nm FinFETs from 292 K to 10 mK: Characterization and a Temperature-Continuous Compact Model for Qubit Control

RESUMO

We report cryogenic characterization and compact modeling of GlobalFoundries (GF) 12LP regular-voltage-threshold (RVT) n- and p-FinFETs, measured from 292 K to 10 mK. Both devices retain sub-Kelvin gate control without carrier freeze-out, with the n-type device exhibiting an intrinsic sub-threshold slope (SS) floor of 24.8 mV/dec. To bypass high on-chip series routing resistance that confounds peak-gm extraction, we adopt a fixed-current (3.26 uA/um) methodology. These low-current metrics inform a continuous 1.36 K to 292 K compact model using dynamic parameter injection, preserving room-temperature process development kit (PDK) qualification.