PAPER / ARXIV:2609.10979
Shona McNab , Phoebe Pearce , Pietro P. Altermatt , Jingnan Tong , Ruy Sebastian Bonilla , Timothy W. Schmidt , Murad J. Y. Tayebjee , Bram Hoex , Alison Ciesla , Michael P. Nielsen , Nicholas J. Ekins Daukes
RESUMO
Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.
NO MESMO MAPA