Thermal Stability and Carrier Recombination Kinetics in InGaN/GaN Multiple Quantum Wells under High-Temperature Annealing

RESUMO

The thermal stability and carrier recombination kinetics of an as-received InGaN/GaN multiple quantum well (MQW) structure, capped with a protective AlN thin film, are studied following a series of thermal annealings at temperatures between 500 deg C and 1100 deg C. Under 325 nm focused laser excitation at room temperature, the sample's photoluminescence (PL) spectrum exhibits three emission bands: an ultraviolet peak at 363 nm, a blue peak at 455 nm, and a yellow peak at 565 nm. We find that the MQW's 455 nm emission is preserved after annealing at 1100 deg C. Moreover, room-temperature PL excitation (PLE) and time-resolved PL (TRPL) have been investigated to shed light on the sample's energy-transfer mechanisms and emission decay characteristics. Power-dependent PL spectra analysis shows that the carrier recombination mechanism of the MQW's emission has not been affected by thermal treatment. Rate equation modelling and chromaticity coordinate analysis also show limited thermal impact on the calculated equivalent emission lifetime and emissive colour. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) analysis has been performed, further evidencing the preservation of the MQW structure in the annealed sample.