Heteroepitaxial Growth of PbSe on InP Substrates via Lattice-Matched III-V Buffer Layers

RESUMO

Detector cost remains a barrier to the widespread adoption of mid-wave infrared (3-5 micron) technology. PbSe, an inexpensive narrow band gap IV-VI semiconductor that has been used since the early 1940s, delivers high performance for infrared detection despite the abundance of grain boundaries in polycrystalline films. Epitaxial growth, however, could provide superior crystalline quality and interfaces, but suitable substrates remain limited for PbSe. Recent PbSe heteroepitaxy has focused primarily on III-V, II-VI and group-IV substrates that each offer a comparatively narrow range of lattice-matched alloys for heterostructure engineering. Here we show that InP-based heteroepitaxy provides access to a broader materials platform while limiting the lattice mismatch with PbSe to approximately 4%. We grow 150-nm thick PbSe films by molecular beam epitaxy on 200-nm thick In0.53Ga0.47As and In0.52Al0.48As buffers on (001) InP substrates. Reflection high-energy electron diffraction and X-ray diffraction show (001)-oriented rock-salt PbSe with an out-of-plane lattice constant of 6.12 Angstrom on both buffers. Photoluminescence (PL) is observed from room-temperature down to 12 K and the peak wavelength red-shifts from 3.7 to 5.0 microns. Under identical measurement conditions, the room-temperature peak PL intensities from films on In0.53Ga0.47As and In0.52Al0.48As are approximately 1.9x and 1.3x that of a PbSe on GaAs substrate reference, respectively. These results establish an InP-compatible platform for integrating narrow band-gap PbSe with a broad range of ternary and quaternary III-V alloys, including, for example, structures in which In0.53Ga0.47As serves as both a short-wave infrared absorber and a template for PbSe growth.