Computational analysis and performance optimization of SrScCu3Se4-based solar cells using COMSOL Multiphysics

RESUMO

Transition metal-based quaternary semiconductors show strong magneto-optical and thermoelectric properties, yet their photovoltaic performance in realistic three-dimensional device architectures remains underexplored. In this work, we investigate a n-ZnSe/p-SrScCu3Se4/p+-WSe2 quaternary chalcogenide heterostructure using three-dimensional finite-element simulations in COMSOL Multiphysics. The model self-consistently couples wavelength-dependent optical generation, drift-diffusion carrier transport, and thermal loss analysis under AM1.5G, 1-sun illumination within a fully coupled opto-electro-thermal framework. The effect of absorber width, acceptor level, and bulk defects on photovoltaic performance, carrier generation, and recombination profile is investigated in this study. Quaternary chalcogenide device produces an open circuit voltage (VOC) of 1.02 V, short-circuit current density (JSC) of 32.472 mA/cm2, fill factor (FF) of 88.212%, and power conversion efficiency (PCE) of 29.217% under optimized conditions. The quantum efficiency (QE) results indicate that the device effectively transforms incident light into charge carriers within the visible spectrum, however absorption and carrier collecting performance diminish in the near-infrared range. The electrothermal simulations indicate modest, spatially non-uniform temperature increases relevant to Joule heating and nonradiative recombination heating within the active layers. Overall, these findings ensure that SrScCu3Se4, a quaternary chalcogenide, is a promising absorber material and offers a strong experimental design consideration for obtaining high-performance, thermally stable three-dimensional photovoltaic device topologies.